Determination of the substitutional nitrogen content and the electron effective mass in InN<inf>x</inf>Sb<inf>1-x</inf> (001) epitaxial layers Mahboob, I, Veal, TD and McConville, Christopher F 2003, Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers, IEE Proceedings: Optoelectronics, vol. 150, no. 1, pp. 102-104, doi: 10.1049/ip-opt:20030045. Attached Files Name Description MIMEType Size Downloads Title Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers Author(s) Mahboob, I Veal, TD McConville, Christopher F orcid.org/0000-0003-1040-2794 Journal name IEE Proceedings: Optoelectronics Volume number 150 Issue number 1 Start page 102 End page 104 Total pages 3 Publisher IEE-INST ELEC ENG Publication date 2003-02-01 ISSN 1350-2433 Keyword(s) Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Optics Telecommunications Engineering X-RAY-DIFFRACTION BAND-STRUCTURE V ALLOYS SPECTROSCOPY GANXAS1-X ENERGY GAAS GAP Language eng DOI 10.1049/ip-opt:20030045 Indigenous content off HERDC Research category CN.1 Other journal article Persistent URL http://hdl.handle.net/10536/DRO/DU:30142328 Document type: Journal Article Collection: Office of the Deputy Vice-Chancellor (Research) Related Links Link Description Connect to published version Go to link with your DU access privileges     Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved. Versions Version Filter Type Fri, 18 Sep 2020, 14:35:35 EST Sat, 19 Sep 2020, 05:01:42 EST Sat, 19 Sep 2020, 06:04:53 EST Wed, 09 Dec 2020, 13:34:47 EST Wed, 09 Dec 2020, 13:35:36 EST Wed, 09 Dec 2020, 14:31:03 EST Filtered Full Citation counts:   Cited 3 times in TR Web of Science Cited 4 times in Scopus Search Google Scholar Access Statistics: 30 Abstract Views, 0 File Downloads  -  Detailed Statistics Created: Fri, 18 Sep 2020, 14:35:35 EST

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