Low-energy nitrogen ion implantation of InSb

Mahboob, I, Veal, TD and McConville, Christopher F 2004, Low-energy nitrogen ion implantation of InSb, Journal of Applied Physics, vol. 96, no. 9, pp. 4935-4938, doi: 10.1063/1.1792390.

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Title Low-energy nitrogen ion implantation of InSb
Author(s) Mahboob, I
Veal, TD
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Journal of Applied Physics
Volume number 96
Issue number 9
Start page 4935
End page 4938
Total pages 4
Publisher AMER INST PHYSICS
Publication date 2004-11-01
ISSN 0021-8979
1089-7550
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
HYDROGEN
GA(IN)NAS
Language eng
DOI 10.1063/1.1792390
Indigenous content off
Field of Research 01 Mathematical Sciences
02 Physical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142331

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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