Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1−x alloys

Veal, TD, Mahboob, I, Piper, LFJ, McConville, Christopher F and Hopkinson, M 2004, Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1−x alloys, Applied Physics Letters, vol. 85, no. 9, pp. 1550-1552, doi: 10.1063/1.1784886.

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Title Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1−x alloys
Author(s) Veal, TD
Mahboob, I
Piper, LFJ
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Hopkinson, M
Journal name Applied Physics Letters
Volume number 85
Issue number 9
Start page 1550
End page 1552
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2004-08-30
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
LATTICE-PARAMETER
EPILAYERS
GAAS
Language eng
DOI 10.1063/1.1784886
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142334

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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