Origin of electron accumulation at wurtzite InN surfaces

Mahboob, I, Veal, TD, Piper, LFJ, McConville, Christopher F, Lu, H, Schaff, WJ, Furthmüller, J and Bechstedt, F 2004, Origin of electron accumulation at wurtzite InN surfaces, Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 20, doi: 10.1103/PhysRevB.69.201307.

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Title Origin of electron accumulation at wurtzite InN surfaces
Author(s) Mahboob, I
Veal, TD
Piper, LFJ
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Lu, H
Schaff, WJ
Furthmüller, J
Bechstedt, F
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 69
Issue number 20
Article ID ARTN 201307
Total pages 4
Publisher AMER PHYSICAL SOC
Publication date 2004-05-01
ISSN 0163-1829
2469-9969
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
TOTAL-ENERGY CALCULATIONS
FUNDAMENTAL-BAND GAP
WAVE BASIS-SET
CHARGE ACCUMULATION
OPTICAL-PROPERTIES
HEXAGONAL INN
SEMICONDUCTORS
DEPENDENCE
EPITAXY
LAYERS
Language eng
DOI 10.1103/PhysRevB.69.201307
Indigenous content off
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142340

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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