Electron accumulation at InN/AIN and InN/GaN interfaces

Veal, TD, Piper, LFJ, Mahboob, I, Lu, H, Schaff, WJ and McConville, Christopher F 2005, Electron accumulation at InN/AIN and InN/GaN interfaces, Physica Status Solidi C: Conferences, vol. 2, no. 7, pp. 2246-2249, doi: 10.1002/pssc.200461418.

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Title Electron accumulation at InN/AIN and InN/GaN interfaces
Author(s) Veal, TD
Piper, LFJ
Mahboob, I
Lu, H
Schaff, WJ
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Contributor(s) Stutzmann, M
Journal name Physica Status Solidi C: Conferences
Volume number 2
Issue number 7
Start page 2246
End page 2249
Total pages 4
Publisher WILEY-V C H VERLAG GMBH
Place of publication Pittsburgh, PA
Publication date 2005-11-08
ISSN 1610-1634
1610-1642
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Ceramics
Optics
Physics, Condensed Matter
Materials Science
Physics
m
INN
Language eng
DOI 10.1002/pssc.200461418
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0912 Materials Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142590

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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