Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

Piper, LFJ, Veal, TD, Lowe, MJ and McConville, Christopher F 2006, Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states, Physical Review B - Condensed Matter and Materials Physics, vol. 73, no. 19, doi: 10.1103/PhysRevB.73.195321.

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Title Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states
Author(s) Piper, LFJ
Veal, TD
Lowe, MJ
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 73
Issue number 19
Article ID ARTN 195321
Total pages 7
Publisher AMER PHYSICAL SOC
Publication date 2006-05-31
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
SCHOTTKY-BARRIER HEIGHTS
ENERGY-LOSS SPECTROSCOPY
NATIVE DEFECTS
BAND
ACCUMULATION
LAYERS
SEMICONDUCTORS
PARAMETERS
CONTINUUM
PLASMON
Language eng
DOI 10.1103/PhysRevB.73.195321
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142682

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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