Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3

King, PDC, Veal, TD, Fuchs, F, Wang, CY, Payne, DJ, Bourlange, A, Zhang, H, Bell, GR, Cimalla, V, Ambacher, O, Egdell, RG, Bechstedt, F and McConville, Christopher F 2009, Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3, Physical Review B - Condensed Matter and Materials Physics, vol. 79, no. 20, doi: 10.1103/PhysRevB.79.205211.

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Title Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3
Author(s) King, PDC
Veal, TD
Fuchs, F
Wang, CY
Payne, DJ
Bourlange, A
Zhang, H
Bell, GR
Cimalla, V
Ambacher, O
Egdell, RG
Bechstedt, F
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 79
Issue number 20
Article ID ARTN 205211
Total pages 10
Publisher AMER PHYSICAL SOC
Publication date 2009-05-01
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
density functional theory
electronic density of states
energy gap
indium compounds
surface states
valence bands
X-ray photoelectron spectra
TEMPERATURE DEPENDENCE
OPTICAL-PROPERTIES
INVERSION-LAYERS
INDIUM OXIDE
STATES
SEMICONDUCTORS
TRANSPARENT
PARAMETERS
DENSITIES
FILMS
Language eng
DOI 10.1103/PhysRevB.79.205211
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142687

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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