In-vacancies in Si-doped InN

Rauch, C, Reurings, F, Tuomisto, F, Veal, TD, McConville, Christopher F, Lu, H, Schaff, WJ, Gallinat, CS, Koblmüller, G, Speck, JS, Egger, W, Löwe, B, Ravelli, L and Sojak, S 2010, In-vacancies in Si-doped InN, Physica Status Solidi (A) Applications and Materials Science, vol. 207, no. 5, pp. 1083-1086, doi: 10.1002/pssa.200983120.

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Title In-vacancies in Si-doped InN
Author(s) Rauch, C
Reurings, F
Tuomisto, F
Veal, TD
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Lu, H
Schaff, WJ
Gallinat, CS
Koblmüller, G
Speck, JS
Egger, W
Löwe, B
Ravelli, L
Sojak, S
Journal name Physica Status Solidi (A) Applications and Materials Science
Volume number 207
Issue number 5
Start page 1083
End page 1086
Total pages 4
Publisher WILEY-V C H VERLAG GMBH
Place of publication Warsaw, POLAND
Publication date 2010-05-01
ISSN 1862-6300
1862-6319
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
InN films
MBE
Si doping
positron annihilation
vacancy formation
Language eng
DOI 10.1002/pssa.200983120
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0912 Materials Engineering
1007 Nanotechnology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142692

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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