Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

King, PDC, Veal, TD, Jefferson, PH, Zúñiga-Pérez, J, Muñoz-Sanjosé, V and McConville, Christopher F 2009, Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO, Physical Review B - Condensed Matter and Materials Physics, vol. 79, no. 3, doi: 10.1103/PhysRevB.79.035203.

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Title Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
Author(s) King, PDC
Veal, TD
Jefferson, PH
Zúñiga-Pérez, J
Muñoz-Sanjosé, V
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 79
Issue number 3
Article ID ARTN 035203
Total pages 5
Publisher AMER PHYSICAL SOC
Publication date 2009-01-05
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
band structure
cadmium compounds
defect states
electrical conductivity
II-VI semiconductors
impurities
semiconductor materials
surface states
ELECTRONIC-STRUCTURE
HYDROGEN
EPITAXY
ZNO
Language eng
DOI 10.1103/PhysRevB.79.035203
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142700

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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