Growth of dilute GaNSb by plasma-assisted MBE

Buckle, L., Bennett, B. R., Jollands, S., Veal, T. D., Wilson, N. R., Murdin, B. N., McConville, C. F. and Ashley, T. 2005, Growth of dilute GaNSb by plasma-assisted MBE, Journal of Crystal Growth, vol. 278, no. 1-4, pp. 188-192, doi: 10.1016/j.jcrysgro.2004.12.148.

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Title Growth of dilute GaNSb by plasma-assisted MBE
Author(s) Buckle, L.
Bennett, B. R.
Jollands, S.
Veal, T. D.
Wilson, N. R.
Murdin, B. N.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Ashley, T.
Journal name Journal of Crystal Growth
Volume number 278
Issue number 1-4
Start page 188
End page 192
Total pages 5
Publisher Elsevier
Place of publication Amsterdam, The Netherlands
Publication date 2005-05-01
ISSN 0022-0248
Keyword(s) Science & Technology
Physical Sciences
Technology
Crystallography
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
doping
X-ray diffraction
molecular beam epitaxy
antimonides
semiconducting III-V materials
semiconducting gallium compounds
GANXAS1-X
DEVICES
Language eng
DOI 10.1016/j.jcrysgro.2004.12.148
Indigenous content off
Field of Research 0303 Macromolecular and Materials Chemistry
0306 Physical Chemistry (incl. Structural)
0912 Materials Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2005, Elsevier
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142712

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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