Inversion and accumulation layers at InN surfaces

Veal, T. D., Piper, L. F. J., Schaff, W. J. and McConville, C. F. 2006, Inversion and accumulation layers at InN surfaces, Journal of Crystal Growth, vol. 288, no. 2, pp. 268-272, doi: 10.1016/j.jcrysgro.2005.12.100.

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Title Inversion and accumulation layers at InN surfaces
Author(s) Veal, T. D.
Piper, L. F. J.
Schaff, W. J.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Journal name Journal of Crystal Growth
Volume number 288
Issue number 2
Start page 268
End page 272
Total pages 5
Publisher Elsevier
Place of publication Amsterdam, The Netherlands
Publication date 2006-03-01
ISSN 0022-0248
Keyword(s) Science & Technology
Physical Sciences
Technology
Crystallography
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
characterization
surfaces
nitrides
semiconducting III-V materials
semiconducting indium compounds
MOLECULAR-BEAM EPITAXY
III-NITRIDE ALLOYS
ELECTRON ACCUMULATION
SPIN INJECTION
GROWTH
INTERFACES
FILMS
Language eng
DOI 10.1016/j.jcrysgro.2005.12.100
Indigenous content off
Field of Research 0303 Macromolecular and Materials Chemistry
0306 Physical Chemistry (incl. Structural)
0912 Materials Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2006, Elsevier
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142721

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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