Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)

Zhang, KHL, Lazarov, VK, Veal, TD, Oropeza, FE, McConville, Christopher, Egdell, RG and Walsh, A 2011, Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111), Journal of Physics Condensed Matter, vol. 23, no. 33, doi: 10.1088/0953-8984/23/33/334211.


Title Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)
Author(s) Zhang, KHL
Lazarov, VK
Veal, TD
Oropeza, FE
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Egdell, RG
Walsh, A
Journal name Journal of Physics Condensed Matter
Volume number 23
Issue number 33
Article ID ARTN 334211
Total pages 8
Publisher IOP PUBLISHING LTD
Place of publication England
Publication date 2011-08-24
ISSN 0953-8984
1361-648X
Keyword(s) Science & Technology
Physical Sciences
Physics, Condensed Matter
Physics
TOTAL-ENERGY CALCULATIONS
OPTICAL-PROPERTIES
INDIUM OXIDE
SURFACE-MORPHOLOGY
ITO FILMS
CONDUCTIVITY
PATTERN
Language eng
DOI 10.1088/0953-8984/23/33/334211
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0912 Materials Engineering
1007 Nanotechnology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142740

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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