The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Bourlange, A, Payne, DJ, Palgrave, RG, Zhang, H, Foord, JS, Egdell, RG, Jacobs, RMJ, Veal, TD, King, PDC and McConville, Christopher 2009, The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy, Journal of Applied Physics, vol. 106, no. 1, doi: 10.1063/1.3153966.


Title The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
Author(s) Bourlange, A
Payne, DJ
Palgrave, RG
Zhang, H
Foord, JS
Egdell, RG
Jacobs, RMJ
Veal, TD
King, PDC
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Journal name Journal of Applied Physics
Volume number 106
Issue number 1
Article ID ARTN 013703
Total pages 9
Publisher AMER INST PHYSICS
Publication date 2009-07-24
ISSN 0021-8979
1089-7550
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
carrier density
conduction bands
doping profiles
indium compounds
infrared spectra
lattice constants
molecular beam epitaxial growth
photoelectron spectra
plasma materials processing
reflectivity
semiconductor doping
semiconductor growth
semiconductor materials
semiconductor thin films
spectral line intensity
INDIUM-TIN-OXIDE
X-RAY PHOTOEMISSION
DILUTE ELECTRON-GAS
SB-DOPED SNO2
PHOTOELECTRON-SPECTRA
NEUTRON-DIFFRACTION
DEFECT STRUCTURE
THIN-FILMS
TRANSPARENT
ZIRCONIA
Language eng
DOI 10.1063/1.3153966
Indigenous content off
Field of Research 01 Mathematical Sciences
02 Physical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142751

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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