Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Veal, TD, King, PDC, Hatfield, SA, Bailey, LR, McConville, Christopher, Martel, B, Moreno, JC, Frayssinet, E, Semond, F and Zúñiga-Pérez, J 2008, Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy, Applied Physics Letters, vol. 93, no. 20, doi: 10.1063/1.3032911.


Title Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
Author(s) Veal, TD
King, PDC
Hatfield, SA
Bailey, LR
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Martel, B
Moreno, JC
Frayssinet, E
Semond, F
Zúñiga-Pérez, J
Journal name Applied Physics Letters
Volume number 93
Issue number 20
Article ID ARTN 202108
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2008-12-02
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
aluminium compounds
conduction bands
gallium compounds
III-V semiconductors
II-VI semiconductors
indium compounds
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
MOLECULAR-BEAM EPITAXY
II-VI
SEMICONDUCTORS
INN
ZNO
INTERFACE
GROWTH
STATES
GAP
Language eng
DOI 10.1063/1.3032911
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142757

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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