Influence of growth conditions and polarity on interface-related electron density in InN

King, PDC, Veal, TD, Gallinat, CS, Koblmüller, G, Bailey, LR, Speck, JS and McConville, Christopher 2008, Influence of growth conditions and polarity on interface-related electron density in InN, Journal of Applied Physics, vol. 104, no. 10, doi: 10.1063/1.3020528.


Title Influence of growth conditions and polarity on interface-related electron density in InN
Author(s) King, PDC
Veal, TD
Gallinat, CS
Koblmüller, G
Bailey, LR
Speck, JS
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Journal name Journal of Applied Physics
Volume number 104
Issue number 10
Article ID ARTN 103703
Total pages 5
Publisher AMER INST PHYSICS
Publication date 2008-12-08
ISSN 0021-8979
1089-7550
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
buffer layers
Fermi level
gallium compounds
Hall effect
III-V semiconductors
indium compounds
semiconductor growth
semiconductor thin films
valence bands
wide band gap semiconductors
MOLECULAR-BEAM EPITAXY
MULTIPLE CARRIER TRANSPORT
INDIUM NITRIDE
BAND-GAP
SEMICONDUCTORS
ACCUMULATION
Language eng
DOI 10.1063/1.3020528
Indigenous content off
Field of Research 01 Mathematical Sciences
02 Physical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142758

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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