Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

King, PDC, Veal, TD, Jefferson, PH, McConville, Christopher, Wang, T, Parbrook, PJ, Lu, H and Schaff, WJ 2007, Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy, Applied Physics Letters, vol. 90, no. 13, doi: 10.1063/1.2716994.


Title Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
Author(s) King, PDC
Veal, TD
Jefferson, PH
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Wang, T
Parbrook, PJ
Lu, H
Schaff, WJ
Journal name Applied Physics Letters
Volume number 90
Issue number 13
Article ID ARTN 132105
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2007-04-08
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
INN
GAP
ALN
Language eng
DOI 10.1063/1.2716994
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142771

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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