Transition from electron accumulation to depletion at InGaN surfaces

Veal, TD, Jefferson, PH, Piper, LFJ, McConville, Christopher, Joyce, TB, Chalker, PR, Considine, L, Lu, H and Schaff, WJ 2006, Transition from electron accumulation to depletion at InGaN surfaces, Applied Physics Letters, vol. 89, no. 20, doi: 10.1063/1.2387976.


Title Transition from electron accumulation to depletion at InGaN surfaces
Author(s) Veal, TD
Jefferson, PH
Piper, LFJ
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Joyce, TB
Chalker, PR
Considine, L
Lu, H
Schaff, WJ
Journal name Applied Physics Letters
Volume number 89
Issue number 20
Article ID ARTN 202110
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2006-11-23
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
BAND OFFSETS
INN
GAN
ALN
Language eng
DOI 10.1063/1.2387976
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142773

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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