Band anticrossing in GaNxSb1-x

Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, Christopher, Murdin, BN, Buckle, L, Smith, GW and Ashley, T 2006, Band anticrossing in GaNxSb1-x, Applied Physics Letters, vol. 89, no. 11, doi: 10.1063/1.2349832.


Title Band anticrossing in GaNxSb1-x
Author(s) Jefferson, PH
Veal, TD
Piper, LFJ
Bennett, BR
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Murdin, BN
Buckle, L
Smith, GW
Ashley, T
Journal name Applied Physics Letters
Volume number 89
Issue number 11
Article ID ARTN 111921
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2006-09-21
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
ALLOYS
SEMICONDUCTORS
PHOTOLUMINESCENCE
PARAMETERS
ABSORPTION
REDUCTION
GANASSB
GROWTH
GANSB
Language eng
DOI 10.1063/1.2349832
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142774

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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