Origin of the n-type conductivity of InN: The role of positively charged dislocations Piper, LFJ, Veal, TD, McConville, Christopher, Lu, H and Schaff, WJ 2006, Origin of the n-type conductivity of InN: The role of positively charged dislocations, Applied Physics Letters, vol. 88, no. 25, doi: 10.1063/1.2214156. Title Origin of the n-type conductivity of InN: The role of positively charged dislocations Author(s) Piper, LFJ Veal, TD McConville, Christopher orcid.org/0000-0003-1040-2794 Lu, H Schaff, WJ Journal name Applied Physics Letters Volume number 88 Issue number 25 Article ID ARTN 252109 Total pages 3 Publisher AMER INST PHYSICS Publication date 2006-06-19 ISSN 0003-6951 1077-3118 Keyword(s) Science & Technology Physical Sciences Physics, Applied Physics DEFECTS SCATTERING GROWTH Language eng DOI 10.1063/1.2214156 Indigenous content off Field of Research 02 Physical Sciences 09 Engineering 10 Technology HERDC Research category C1 Refereed article in a scholarly journal Persistent URL http://hdl.handle.net/10536/DRO/DU:30142779 Document type: Journal Article Collection: Office of the Deputy Vice-Chancellor (Research) Related Links Link Description Connect to published version Go to link with your DU access privileges     Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved. Versions Version Filter Type Tue, 22 Sep 2020, 17:12:30 EST Wed, 23 Sep 2020, 05:04:38 EST Wed, 23 Sep 2020, 06:06:00 EST Fri, 02 Oct 2020, 12:55:47 EST Fri, 02 Oct 2020, 12:56:29 EST Filtered Full Citation counts:   Cited 128 times in TR Web of Science Cited 132 times in Scopus Search Google Scholar Access Statistics: 8 Abstract Views  -  Detailed Statistics Created: Tue, 22 Sep 2020, 17:12:30 EST

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