Origin of the n-type conductivity of InN: The role of positively charged dislocations

Piper, LFJ, Veal, TD, McConville, Christopher, Lu, H and Schaff, WJ 2006, Origin of the n-type conductivity of InN: The role of positively charged dislocations, Applied Physics Letters, vol. 88, no. 25, doi: 10.1063/1.2214156.


Title Origin of the n-type conductivity of InN: The role of positively charged dislocations
Author(s) Piper, LFJ
Veal, TD
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Lu, H
Schaff, WJ
Journal name Applied Physics Letters
Volume number 88
Issue number 25
Article ID ARTN 252109
Total pages 3
Publisher AMER INST PHYSICS
Publication date 2006-06-19
ISSN 0003-6951
1077-3118
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
DEFECTS
SCATTERING
GROWTH
Language eng
DOI 10.1063/1.2214156
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142779

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
Connect to link resolver
 
Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved.

Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 128 times in TR Web of Science
Scopus Citation Count Cited 132 times in Scopus
Google Scholar Search Google Scholar
Access Statistics: 8 Abstract Views  -  Detailed Statistics
Created: Tue, 22 Sep 2020, 17:12:30 EST

Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.