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Equivalent circuit modeling of a dual-gate graphene fet

Hasan, Saima, Kouzani, Abbas and Parvez Mahmud, MA 2021, Equivalent circuit modeling of a dual-gate graphene fet, Electronics, vol. 10, no. 1, pp. 1-13, doi: 10.3390/electronics10010063.

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Title Equivalent circuit modeling of a dual-gate graphene fet
Author(s) Hasan, Saima
Kouzani, AbbasORCID iD for Kouzani, Abbas orcid.org/0000-0002-6292-1214
Parvez Mahmud, MAORCID iD for Parvez Mahmud, MA orcid.org/0000-0002-1905-6800
Journal name Electronics
Volume number 10
Issue number 1
Start page 1
End page 13
Total pages 13
Publisher MDPI
Place of publication Basel, Switzerland
Publication date 2021
ISSN 2079-9292
Keyword(s) graphene field effect transistor
ambipolar conduction
threshold voltage dependence
transconductance
quantum capacitance
Summary This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.
Language eng
DOI 10.3390/electronics10010063
Indigenous content off
Field of Research 0906 Electrical and Electronic Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Free to Read? Yes
Persistent URL http://hdl.handle.net/10536/DRO/DU:30147355

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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.