Equivalent circuit modeling of a dual-gate graphene fet Hasan, Saima, Kouzani, Abbas and Parvez Mahmud, MA 2021, Equivalent circuit modeling of a dual-gate graphene fet, Electronics, vol. 10, no. 1, pp. 1-13, doi: 10.3390/electronics10010063. Attached Files Name Description MIMEType Size Downloads Title Equivalent circuit modeling of a dual-gate graphene fet Author(s) Hasan, Saima Kouzani, Abbas orcid.org/0000-0002-6292-1214 Parvez Mahmud, MA orcid.org/0000-0002-1905-6800 Journal name Electronics Volume number 10 Issue number 1 Start page 1 End page 13 Total pages 13 Publisher MDPI Place of publication Basel, Switzerland Publication date 2021 ISSN 2079-9292 Keyword(s) graphene field effect transistor ambipolar conduction threshold voltage dependence transconductance quantum capacitance Summary This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance. Language eng DOI 10.3390/electronics10010063 Indigenous content off Field of Research 0906 Electrical and Electronic Engineering HERDC Research category C1 Refereed article in a scholarly journal Free to Read? Yes Persistent URL http://hdl.handle.net/10536/DRO/DU:30147355 Document type: Journal Article Collections: Faculty of Science, Engineering and Built Environment School of Engineering Open Access Collection Related Links Link Description Link to full-text (open access)     Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved. Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au. Versions Version Filter Type Tue, 19 Jan 2021, 07:13:26 EST Tue, 19 Jan 2021, 12:34:17 EST Wed, 20 Jan 2021, 04:01:03 EST Wed, 20 Jan 2021, 05:05:07 EST Sat, 06 Feb 2021, 01:31:13 EST Wed, 17 Feb 2021, 12:11:15 EST Wed, 17 Feb 2021, 12:13:16 EST Wed, 17 Feb 2021, 15:02:59 EST Filtered Full Citation counts:   Cited 0 times in TR Web of Science Cited 0 times in Scopus Search Google Scholar Access Statistics: 8 Abstract Views, 1 File Downloads  -  Detailed Statistics Created: Tue, 19 Jan 2021, 12:34:17 EST

Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.