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A 60 GHz LNA with 18.6 dB gain and 5.7 dB NF in 90nm CMOS

conference contribution
posted on 2010-12-01, 00:00 authored by K Kang, James Brinkhoff, F Lin
A 60 GHz low noise amplifier is implemented in a commercial 90nm RF CMOS process. A scalable model based on electromagnetic simulation is adopted to model on-chip microstrip transmission lines. First-pass silicon success has been achieved by accurate modeling of passive and active devices and careful layout. The three-stage LNA achieves 18.6 dB gain, a noise figure of 5.7 dB and an input P 1dB of-14.8 dBm. It consumes 24 mA from a 1.2 V supply. The total LNA die area with pads is 1.4 × 0.5 mm 2 . © 2010 IEEE.

History

Pagination

164 - 167

Publisher

IEEE

Location

Chengdu, China

Place of publication

Piscataway, N.J.

Start date

2010-05-08

End date

2010-05-11

ISBN-13

9781424457052

Publication classification

EN.1 Other conference paper

Title of proceedings

2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010

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