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A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET
A two dimensional analytical model of drain to source current as well as subthreshold slope of a triple material double gate MOSFET has been developed in this work. Basic drift-diffusion equation has been used to derive the drain to source current model. An expression of pinch-off voltage has been derived for modeling drain current in saturation region. The current in the device has been studied as function of drain to source voltage and gate voltage as well. In the work, leakage current in zero gate bias condition has also been presented. Variations in subthreshold slope of the device owing to change in device parameters have been lifted up. Our model results have been verified with the simulation data obtained by using a professional numerical device simulator.
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Event
Electrical and Computer Engineering. International Conference (8th : 2014 : Dhaka, Bangladesh)Pagination
92 - 95Publisher
IEEELocation
Dhaka, BangladeshPlace of publication
Piscataway, N.J.Publisher DOI
Start date
2014-12-20End date
2014-12-22ISBN-13
9781479941667Language
engPublication classification
E Conference publication; E1.1 Full written paper - refereedCopyright notice
2014, IEEETitle of proceedings
ICECE 2014 : Proceedings of the 8th International Conference on Electrical and Computer EngineeringUsage metrics
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