Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks
conference contribution
posted on 2012-01-01, 00:00authored byA Pak, Y Mafinejad, Abbas KouzaniAbbas Kouzani, H Nabovati, K Mafinezhad
This paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.
History
Event
IEEE International Symposium on Circuits and Systems. Conference (2012 : Seoul, Korea)
Pagination
3282 - 3284
Publisher
IEEE
Location
Seoul, Korea
Place of publication
Piscataway, N. J.
Start date
2012-05-20
End date
2012-05-23
ISBN-13
9781467302197
ISBN-10
1467302198
Language
eng
Publication classification
E1 Full written paper - refereed
Copyright notice
2012, IEEE
Title of proceedings
ISCAS 2012 : Proceedings of the 2012 IEEE International Symposium on Circuits and Systems