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Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks
conference contribution
posted on 2012-01-01, 00:00 authored by A Pak, Y Mafinejad, Abbas KouzaniAbbas Kouzani, H Nabovati, K MafinezhadThis paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.
History
Event
IEEE International Symposium on Circuits and Systems. Conference (2012 : Seoul, Korea)Pagination
3282 - 3284Publisher
IEEELocation
Seoul, KoreaPlace of publication
Piscataway, N. J.Start date
2012-05-20End date
2012-05-23ISBN-13
9781467302197ISBN-10
1467302198Language
engPublication classification
E1 Full written paper - refereedCopyright notice
2012, IEEETitle of proceedings
ISCAS 2012 : Proceedings of the 2012 IEEE International Symposium on Circuits and SystemsUsage metrics
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