File(s) not publicly available
AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy
conference contribution
posted on 2011-09-01, 00:00 authored by C K Kao, Y Liao, C Thomidis, A Moldawer, Dipesh BhattaraiDipesh Bhattarai, H Sun, T D MoustakasWe report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%. © 2011 OSA.
