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AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy
conference contributionposted on 2011-09-01, 00:00 authored by C K Kao, Y Liao, C Thomidis, A Moldawer, Dipesh BhattaraiDipesh Bhattarai, H Sun, T D Moustakas
We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%. © 2011 OSA.