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Bilayer graphene nanoribbon carrier statistics in the degenerate regime

Version 2 2024-06-05, 07:53
Version 1 2020-06-12, 14:14
conference contribution
posted on 2024-06-05, 07:53 authored by SM Mousavi, MT Ahmadi, JF Webb, H Sadeghi, Azadeh Nilghaz, A Amin, Z Johari, R Ismail
In this paper we discuss the energy band structure of bilayer graphene nanoribbons (BGNRs) near the Fermi level between zero and 3kBT away from the conduction and valence bands. BGNRs can be used as the channel in field effect transistors (FETs). A FET can be created using graphene bilayers with the gate voltage perpendicular to the layers. We focus on carrier statistics in the degenerate regime and the density of states, and consider them to be fundamental properties of BGNRs. The model presented indicates that the normalized Fermi energy in the degenerate regime strongly depends on carrier concentration and is independent of temperature. © 2011 American Institute of Physics.

History

Volume

1337

Pagination

180-183

Location

Sarawak, Malaysia

Start date

2011-12-02

End date

2011-12-04

ISSN

0094-243X

eISSN

1551-7616

ISBN-13

9780735408937

Language

eng

Publication classification

E1.1 Full written paper - refereed

Title of proceedings

Proceedings of the Fourth Global Conference on Power Control and Optimization, Sarawak, Malaysia, 2-4 December 2010

Event

Power Control and Optimization. Conference (4th : 2010 : Sarawak, Malaysia)

Publisher

American Institute of Physics

Place of publication

Melville, N.Y.

Series

AIP Conference Proceedings

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