Bilayer graphene nanoribbon carrier statistics in the degenerate regime
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conference contribution
posted on 2024-06-05, 07:53 authored by SM Mousavi, MT Ahmadi, JF Webb, H Sadeghi, Azadeh Nilghaz, A Amin, Z Johari, R IsmailIn this paper we discuss the energy band structure of bilayer graphene nanoribbons (BGNRs) near the Fermi level between zero and 3kBT away from the conduction and valence bands. BGNRs can be used as the channel in field effect transistors (FETs). A FET can be created using graphene bilayers with the gate voltage perpendicular to the layers. We focus on carrier statistics in the degenerate regime and the density of states, and consider them to be fundamental properties of BGNRs. The model presented indicates that the normalized Fermi energy in the degenerate regime strongly depends on carrier concentration and is independent of temperature. © 2011 American Institute of Physics.
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Volume
1337Pagination
180-183Location
Sarawak, MalaysiaPublisher DOI
Start date
2011-12-02End date
2011-12-04ISSN
0094-243XeISSN
1551-7616ISBN-13
9780735408937Language
engPublication classification
E1.1 Full written paper - refereedTitle of proceedings
Proceedings of the Fourth Global Conference on Power Control and Optimization, Sarawak, Malaysia, 2-4 December 2010Event
Power Control and Optimization. Conference (4th : 2010 : Sarawak, Malaysia)Publisher
American Institute of PhysicsPlace of publication
Melville, N.Y.Series
AIP Conference ProceedingsUsage metrics
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