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DC and microwave characteristics of metamorphic InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction bipolar transistors grown on GaAs substrates

conference contribution
posted on 2025-03-31, 02:22 authored by H Wang, GI Ng, HQ Zheng, Lloyd ChuaLloyd Chua, YZ Xiong
DC and microwave characteristics of metamorphic InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction bipolar transistors grown on GaAs substrates<p></p>

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  1. 1.
    DOI - Is version of https://doi.org/10.1109/ICIPRM.2000.850275

Location

Williamsburg, VA

Open access

  • No

Language

eng

Publication classification

E1.1 Full written paper - refereed

Pagination

235-238

Start date

2000-05-14

End date

2000-05-18

ISSN

1092-8669

ISBN-10

0-7803-6320-5

Title of proceedings

Proceedings of the International Conference on Indium Phosphide and Related Materials 2000

Event

Indium Phosphide and Related Materials. Conference (2000 : Williamsburg, VA)

Publisher

IEEE

Place of publication

Piscataway, N.J.

Series

CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS

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    Keywords

    EngineeringEngineering, Electrical & ElectronicMaterials ScienceMaterials Science, Characterization & TestingMaterials Science, MultidisciplinaryPhysical SciencesPhysicsPhysics, AppliedScience & TechnologyTechnology

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    All Rights Reserved

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