DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates

Wang, H; Ng, GI; Zheng, HQ; Chua, Lloyd; Xiong, YZ

DC and microwave characteristics of metamorphic InP/In_0.53Ga_0.47As heterojunction bipolar transistors grown on GaAs substrates

conference contribution

posted on 2025-03-31, 02:22 authored by H Wang, GI Ng, HQ Zheng, Lloyd ChuaLloyd Chua, YZ Xiong

DC and microwave characteristics of metamorphic InP/In_0.53Ga_0.47As heterojunction bipolar transistors grown on GaAs substrates

History

Pagination

235-238

Location

Williamsburg, VA

Publisher DOI

https://doi.org/10.1109/ICIPRM.2000.850275

Open access

No

Start date

2000-05-14

End date

2000-05-18

ISSN

1092-8669

ISBN-10

0-7803-6320-5

Language

eng

Publication classification

E1.1 Full written paper - refereed

Title of proceedings

Proceedings of the International Conference on Indium Phosphide and Related Materials 2000

Event

Indium Phosphide and Related Materials. Conference (2000 : Williamsburg, VA)

Publisher

IEEE

Place of publication

Piscataway, N.J.

Series

CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS

Publication URL

https://doi.org/10.1109/iciprm.2000.850275

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Keywords

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Characterization & Testing Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology

DC and microwave characteristics of metamorphic InP/In_0.53Ga_0.47As heterojunction bipolar transistors grown on GaAs substrates

History

Pagination

Location

Publisher DOI

Open access

Start date

End date

ISSN

ISBN-10

Language

Publication classification

Title of proceedings

Event

Publisher

Place of publication

Series

Publication URL

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Keywords

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