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Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes
Version 2 2024-06-03, 15:15
Version 1 2015-08-14, 08:40
conference contribution
posted on 2024-06-03, 15:15 authored by M Petravic, R Peter, I Kavre, LH Li, Ying (Ian) ChenYing (Ian) Chen, LJ Fan, YW YangDecoration of nitrogen vacancies by oxygen atoms has been studied by near-edge x-ray absorption fine structure (NEXAFS) in several boron nitride (BN) structures, including bamboo-like and multi-walled BN nanotubes. Formation of nitrogen vacancies under low-energy ion bombardment reduces oxidation resistance of BN structures and promotes an efficient oxygen-healing mechanism, in full agreement with some recent theoretical predictions. © 2010 IEEE.
History
Pagination
217-218Location
Canberra, A.C.T.Publisher DOI
Start date
2010-12-12End date
2010-12-15ISSN
2377-5505ISBN-13
9781424473328Language
engPublication classification
EN.1 Other conference paperEditor/Contributor(s)
[Unknown]Title of proceedings
COMMAD 2010 : Proceedings of the 2010 Conference on Optoelectronic and Microelectronic Materials and DevicesEvent
Optoelectronic and Microelectronic Materials and Devices (2010 : Canberra, A.C.T.)Publisher
IEEEPlace of publication
Piscataway, N.J.Usage metrics
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