Defect formation in InGaAs/AlSb/InAs memory devices
conference contribution
posted on 2024-02-05, 22:34authored byAurelia Trevisan, Peter HodgsonPeter Hodgson, Dominic Lane, Manus Hayne, Paul M Koenraad
ULTRARAMTM is a novel floating-gate nonvolatile memory in which the oxide barrier of flash is replaced by a triple-barrier resonant tunneling structure comprising of multiple InAs/AlSb heterojunctions. The quality of the triple barrier resonant tunneling heterostructure of an ULTRARAMTM device in terms of interface sharpness and the presence of defects was analyzed by cross-sectional scanning tunneling microscopy. We observed two different types of defects: stacking faults originating in the layers below the triple barrier resonant tunneling structure and AlSb accumulations at the interface between the lower AlSb layer of the triple barrier resonant tunneling structure and the InGaAs channel. The InGaAs surface of a second sample was measured by atomic force microscopy in order to investigate whether its unevenness is caused by deposition of the AlSb layer or it is already present before the AlSb deposition process.
History
Volume
41
Location
Los Angeles, CA.
Start date
2023-01-15
End date
2023-01-19
ISSN
2166-2746
eISSN
2166-2754
Language
eng
Publication classification
E1 Full written paper - refereed
Title of proceedings
PCSI-48 : Proceedings of the 48th Conference on the Physics and Chemistry of Surfaces and Interfaces 2023
Event
Physics and Chemistry of Surfaces and Interfaces. Conference (Los Angeles, CA.)