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Defect formation in InGaAs/AlSb/InAs memory devices

conference contribution
posted on 2024-02-05, 22:34 authored by Aurelia Trevisan, Peter HodgsonPeter Hodgson, Dominic Lane, Manus Hayne, Paul M Koenraad
ULTRARAMTM is a novel floating-gate nonvolatile memory in which the oxide barrier of flash is replaced by a triple-barrier resonant tunneling structure comprising of multiple InAs/AlSb heterojunctions. The quality of the triple barrier resonant tunneling heterostructure of an ULTRARAMTM device in terms of interface sharpness and the presence of defects was analyzed by cross-sectional scanning tunneling microscopy. We observed two different types of defects: stacking faults originating in the layers below the triple barrier resonant tunneling structure and AlSb accumulations at the interface between the lower AlSb layer of the triple barrier resonant tunneling structure and the InGaAs channel. The InGaAs surface of a second sample was measured by atomic force microscopy in order to investigate whether its unevenness is caused by deposition of the AlSb layer or it is already present before the AlSb deposition process.

History

Volume

41

Location

Los Angeles, CA.

Start date

2023-01-15

End date

2023-01-19

ISSN

2166-2746

eISSN

2166-2754

Language

eng

Publication classification

E1 Full written paper - refereed

Title of proceedings

PCSI-48 : Proceedings of the 48th Conference on the Physics and Chemistry of Surfaces and Interfaces 2023

Event

Physics and Chemistry of Surfaces and Interfaces. Conference (Los Angeles, CA.)

Issue

4

Publisher

American Institute of Physics

Place of publication

College Park, MD.