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Demonstration of Electron/Hole Injections in the Gate of p-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance
conference contribution
posted on 2022-09-28, 06:12 authored by Xi Tang, Baikui Li, Jun Zhang, Hui Li, Jisheng Han, Nguyen Nam-Trung, Sima Dimitrijev, Jiannong WangDemonstration of Electron/Hole Injections in the Gate of p-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance
History
Pagination
415-418Location
Shanghai, ChinaPublisher DOI
Start date
2019-05-19End date
2019-05-23ISSN
1063-6854eISSN
1946-0201ISBN-13
978-1-7281-0581-9Language
engPublication classification
E1.1 Full written paper - refereedTitle of proceedings
ISPSD 2019 : International Symposium in Power Semiconductor Devices and ICs : Proceedings of theInstitute of Electrical and Electronics Engineers 2019 conferenceEvent
Institute of Electrical and Electronics Engineers. Conference (2019 : Shanghai, China)Publisher
Institute of Electrical and Electronics EngineersPlace of publication
Piscataway, N.J.Series
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)Usage metrics
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No categories selectedKeywords
Computer ScienceComputer Science, Hardware & ArchitectureDEGRADATIONelectroluminescenceelectron and hole injectionsEngineeringEngineering, Electrical & ElectronicGANHEMTsHEMTSleakage current increasePERSISTENT PHOTOCONDUCTIVITYp-GaNPHOTOLUMINESCENCEScience & TechnologyTechnologythreshold voltage shift
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