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Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters
conference contribution
posted on 2009-01-01, 00:00 authored by Y Mafinejad, Abbas KouzaniAbbas Kouzani, K Mafinezhad, Davood IzadiRF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.
History
Event
International Midwest Symposium IEEE Circuits and Systems (52nd : 2009 : Cuncan, Mexico)Pagination
823 - 826Publisher
IEEELocation
Cancun, MexicoPlace of publication
Piscataway, N. J.Publisher DOI
Start date
2009-08-02End date
2009-08-05ISSN
1548-3746ISBN-13
9781424444793Language
engPublication classification
E1 Full written paper - refereedCopyright notice
2009, IEEETitle of proceedings
MWSCAS 2009 : International Midwest Symposium IEEE Circuits and SystemsUsage metrics
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