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Design and simulation of a low-actuation-voltage MEMS switch

Version 2 2024-06-03, 12:41
Version 1 2016-04-08, 15:53
conference contribution
posted on 2024-06-03, 12:41 authored by Y Mafi Nejad, Abbas KouzaniAbbas Kouzani, L Matekovits
This paper presents a low-actuation-voltage micro-electromechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V.

History

Volume

16

Pagination

132-138

Location

Sydney, N.S.W.

Open access

  • Yes

Start date

2015-09-28

End date

2015-09-30

ISSN

1615-5548

eISSN

2032-944X

ISBN-13

9781631900846

Language

eng

Publication classification

E Conference publication, E1 Full written paper - refereed

Copyright notice

2015, ICST

Title of proceedings

BodyNets 2015 : Proceedings of the 10th EAI International Conference on Body Area Networks

Event

EAI International Conference on Body Area Networks (10th : 2015 : Sydney, N.S.W.)

Issue

9

Publisher

ICST

Place of publication

Brussels, Belgium

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