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Design and simulation of a low voltage wide band RF MEMS switch
conference contribution
posted on 2009-01-01, 00:00 authored by Y Mafinejad, Abbas KouzaniAbbas Kouzani, K Mafinezhad, H NabovattiThis paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.
History
Event
IEEE International Conference on Systems, Man, and Cybernetics (2009 : San Antonio, Texas)Pagination
4623 - 4627Publisher
IEEELocation
San Antonio, TexasPlace of publication
Piscataway, N. J.Publisher DOI
Start date
2009-10-11End date
2009-10-14ISSN
1062-922XISBN-13
9781424427932Language
engPublication classification
E1 Full written paper - refereedCopyright notice
2009, IEEETitle of proceedings
SMC 2009 : Proceedings of the IEEE International Conference on Systems, Man and CyberneticsUsage metrics
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