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Design of a high sensitive double-gate field-effect transistor biosensor for DNA detection
conference contribution
posted on 2011-01-01, 00:00 authored by Saiful Islam, Abbas KouzaniAbbas KouzaniThe study of interactions between organic biomolecules and semiconducting surfaces is an important consideration for the design and fabrication of field-effect-transistor (FET) biosensor. This paper demonstrates DNA detection by employing a double-gate field effect transistor (DGFET). In addition, an investigation of sensitivity and signal to noise ratio (SNR) is carried out for different values of analyte concentration, buffer ion concentration, pH, reaction constant, etc. Sensitivity, which is indicated by the change of drain current, increases non-linearly after a specific value (∼1nM) of analyte concentration and decreases non-linearly with buffer ion concentration. However, sensitivity is linearly related to the fluidic gate voltage. The drain current has a significant effect on the positive surface group (-NH2) compared to the negative counterpart (-OH). Furthermore, the sensor has the same response at a particular value of pH (5.76) irrespective of the density of surface group, although it decreases with pH value. The signal to noise ratio is improved with higher analyte concentrations and receptor densities.
History
Event
IEEE Engineering in Medicine and Biology Society. Conference (33rd : 2011 : Boston, Mass.)Pagination
4788 - 4791Publisher
IEEELocation
Boston, Mass.Place of publication
[Boston, Mass.]Start date
2011-08-30End date
2011-09-03ISSN
1557-170XISBN-13
9781424441211ISBN-10
1424441218Language
engPublication classification
E1 Full written paper - refereedCopyright notice
2011, IEEETitle of proceedings
EMBC 2011 : Proceedings of the 33rd Annual International Conference of the IEEE Engineering in Medicine and Biology SocietyUsage metrics
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