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Field emission properties from boron nitride nanotube field emitters

Version 2 2024-06-06, 09:31
Version 1 2016-02-29, 10:16
conference contribution
posted on 2024-06-06, 09:31 authored by KN Yun, DH Shin, G Leti, SH Lee, CJ Lee, YH Song, L Li, Ying (Ian) ChenYing (Ian) Chen
Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

History

Pagination

108-109

Location

Guangzhou, China

Start date

2015-07-13

End date

2015-07-17

ISSN

2164-2370

ISBN-13

9781467393577

Language

eng

Publication classification

E Conference publication, E2 Full written paper - non-refereed / Abstract reviewed

Copyright notice

2015, IEEE

Title of proceedings

IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference

Event

International Vacuum Nanoelectronics Conference (28th: 2015: Guangzhou, China)

Publisher

IEEE

Place of publication

Piscataway, N.J.

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