InAlAs/InGaAs/InP modulation doped optoelectronic field effect transistor (MODOFET) for 1.3-1.6 mu m systems

Mitra, H; Puri, Munish; Singh, S; Pal, BB

File(s) not publicly available

InAlAs/InGaAs/InP modulation doped optoelectronic field effect transistor (MODOFET) for 1.3-1.6 mu m systems

conference contribution

posted on 2023-02-07, 03:56 authored by H Mitra, Munish PuriMunish Puri, S Singh, BB Pal

InAlAs/InGaAs/InP modulation doped optoelectronic field effect transistor (MODOFET) for 1.3-1.6 mu m systems

History

Volume

2733

Pagination

127-129

Location

INDIA, NEW DELHI

Start date

1995-12-11

End date

1995-12-16

ISBN-10

0-8194-2114-6

Language

English

Author URL

https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1996BF78E00031&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Editor/Contributor(s)

Lal K

Title of proceedings

SEMICONDUCTOR DEVICES

Event

8th International Workshop on Physics of Semiconductor Devices

Publisher

NAROSA PUBLISHING HOUSE

Series

PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)

Usage metrics

Keywords

Science & Technology Technology Physical Sciences Materials Science, Characterization & Testing Optics Physics, Condensed Matter Materials Science Physics

File(s) not publicly available

InAlAs/InGaAs/InP modulation doped optoelectronic field effect transistor (MODOFET) for 1.3-1.6 mu m systems

History

Volume

Pagination

Location

Start date

End date

ISBN-10

Language

Author URL

Editor/Contributor(s)

Title of proceedings

Event

Publisher

Series

Usage metrics

Categories

Keywords

Licence

Exports