In the Al casting industry, TiB2 grain refiner particles are added to the melt in order to promote heterogeneous nucleation of α-Al crystallites. It has been suggested that thin Al3Ti DO22 layers, adsorbed on the boride particles, might be necessary for successful α-Al nucleation via the peritectic reaction. In order to elucidate this suggestion, the boride/α-Al interfaces were studied in the as-received Ti-B-Al grain refiner rod, as well as after remelting and rapid quenching of the same rod. The investigation was performed using the TEM, EDS, STEM and HREM techniques. For the as- received rod, the EDS study failed to show conclusively enrichment of the interfaces in Ti and indicated clearly only a small enrichment in Si and Fe. The HREM investigation found no indication of a possible crystalline layer coating the boride particles. The borides found in the re-melted rod were observed to readily nucleate α-Al on their basal faces with a well-defined low-index orientation relationship but there was again no indication of any layer on the boride particles. Thus, the borides themselves appeared to be potent sites for the heterogeneous nucleation of α-Al crystals during rapid quenching without a necessary presence of the aluminide layers.
History
Pagination
429-432
Location
Seoul, Korea
Start date
2004-09-12
End date
2004-09-16
ISSN
0951-3248
ISBN-10
0750310170
Language
eng
Publication classification
EN.1 Other conference paper
Title of proceedings
Compound semiconductors 2004 : proceedings of the thirty-first International Symposium on Compound Semiconductors held in Seoul, Korea, 12-16 September 2004
Event
International Symposium on Compound Semiconductors (31st : 2004 : Seoul, Korea)
Publisher
Institute of Physics Publishing
Place of publication
Bristol, Eng.
Series
Institute of Physics conference series, 0951-3248 ; no. 184.