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MBE GROWTH OF STRAINED LAYER INSB/INALSB STRUCTURES

Version 2 2024-06-19, 04:31
Version 1 2021-08-04, 08:47
conference contribution
posted on 2024-06-19, 04:31 authored by CR WHITEHOUSE, CF MCCONVILLE, GM WILLIAMS, AG CULLIS, SJ BARNETT, MK SAKER, MS SKOLNICK, AD PITT
ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.

History

Volume

198

Pagination

283-288

Location

SAN FRANCISCO, CA

Start date

1990-04-16

End date

1990-04-20

ISSN

0272-9172

eISSN

1946-4274

ISBN-10

1-55899-087-9

Language

English

Publication classification

E1.1 Full written paper - refereed

Editor/Contributor(s)

SHAW DW, BEAN JC, KERAMIDAS VG, PEERCY PS

Title of proceedings

EPITAXIAL HETEROSTRUCTURES

Event

SYMP AT THE 1990 SPRING MEETING OF THE MATERIAL RESEARCH SOC : EPITAXIAL HETEROSTRUCTURES

Publisher

MATERIALS RESEARCH SOC

Series

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

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