MBE GROWTH OF STRAINED LAYER INSB/INALSB STRUCTURES
Version 2 2024-06-19, 04:31Version 2 2024-06-19, 04:31
Version 1 2021-08-04, 08:47Version 1 2021-08-04, 08:47
conference contribution
posted on 2024-06-19, 04:31authored byCR WHITEHOUSE, CF MCCONVILLE, GM WILLIAMS, AG CULLIS, SJ BARNETT, MK SAKER, MS SKOLNICK, AD PITT
ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.