RF-performance of dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution

conference contribution

posted on 2024-08-23, 05:10 authored by Alok Kushwaha, Manoj K Pandey, Sujata Pandey, Rajeev SharmaRajeev Sharma, Anil K Gupta

RF-performance of dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution

History

Pagination

264-267

Location

INDIA, Indian Inst Technol, Mumbai

Start date

2007-12-17

End date

2007-12-20

ISBN-13

978-1-4244-1727-8

Language

English

Publication classification

E1.1 Full written paper - refereed

Editor/Contributor(s)

Narasimhan KL, Sharma DK

Title of proceedings

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007

Event

14th International Workshop on the Physics of Semiconductor Devices

Publisher

IEEE

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Keywords

Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Condensed Matter Engineering Physics double gate (DG)dual material (DM)fully depleted (FD)radio frequency (RF)silicon-on-insulator (SOI)short channel effects (SCEs)SIMULATION

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All Rights Reserved

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