A review of GaN HEMTs: Characteristics, parameter impacts, and strategies for oscillation suppression

https://hdl.handle.net/10779/DRO/DU:30031213

journal contribution

posted on 2025-09-08, 03:49 authored by Jinchao Pan, Yachao Ji, Guidong Zhang, Samson YuSamson Yu, Zhong Li

A review of GaN HEMTs: Characteristics, parameter impacts, and strategies for oscillation suppression

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DOI - Is version of https://doi.org/10.23919/cjee.2025.000147

Location

Piscataway, N.J.

Language

eng

Journal

Chinese Journal of Electrical Engineering

Pagination

1-27

ISSN

2096-1529

eISSN

2836-4619

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

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Keywords

GaN HEMT characteristic analysis parasitic parameters oscillation suppression

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All Rights Reserved

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