Ambient temperature diodes and field-effect transistors in InSb/In 1-xAlxSb

Ashley, T; Dean, AB; Elliott, CT; McConville, CF; Pryce, GJ; Whitehouse, CR

Ambient temperature diodes and field-effect transistors in InSb/In 1-xAlxSb

Version 2 2024-06-18, 23:06

Version 1 2020-09-17, 14:48

journal contribution

posted on 2024-06-18, 23:06 authored by T Ashley, AB Dean, CT Elliott, CF McConville, GJ Pryce, CR Whitehouse

Ambient temperature diodes and field-effect transistors in InSb/In 1-xAlxSb

History

Journal

Applied Physics Letters

Volume

59

Pagination

1761-1763

Publisher DOI

https://doi.org/10.1063/1.106216

ISSN

0003-6951

eISSN

1077-3118

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991GH40900037&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

Issue

14

Publisher

AMER INST PHYSICS

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Keywords

Science & Technology Physical Sciences Physics, Applied Physics INSB OPERATION DETECTORS Technology

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Ambient temperature diodes and field-effect transistors in InSb/In 1-xAlxSb

History

Journal

Volume

Pagination

Publisher DOI

ISSN

eISSN

Language

Author URL

Publication classification

Issue

Publisher

Usage metrics

Categories

Keywords

Licence

Exports