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Asymmetric electric field screening in van der Waals heterostructures

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Version 2 2024-06-05, 07:04
Version 1 2018-05-29, 09:39
journal contribution
posted on 2024-06-18, 07:41 authored by LH Li, T Tian, Q Cai, CJ Shih, EJG Santos
A long-standing challenge facing the combination of two-dimensional crystals into heterojunction is the unknown effect of mixing layer of different electronic properties (semiconductors, metals, insulators) on the screening features of the fabricated device platforms including their functionality. Here we use a compelling set of theoretical and experimental techniques to elucidate the intrinsic dielectric screening properties of heterostructures formed by MoS2 and graphene layers. We experimentally observed an asymmetric field screening effect relative to the polarization of the applied gate bias into the surface. Surprisingly, such behavior allows selection of the electronic states that screen external fields, and it can be enhanced with increasing of the number of layers of the semiconducting MoS2 rather than the semi-metal. This work not only provides unique insights on the screening properties of a vast amount of heterojunction fabricated so far, but also uncovers the great potential of controlling a fundamental property for device applications.

History

Journal

Nature Communications

Volume

9

Article number

ARTN 1271

Pagination

1 - 11

Location

England

Open access

  • Yes

ISSN

2041-1723

eISSN

2041-1723

Language

English

Publication classification

C1 Refereed article in a scholarly journal

Copyright notice

2018, The Authors

Issue

1

Publisher

NATURE PUBLISHING GROUP

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