Atomic hydrogen cleaning of polar III-V semiconductor surfaces
Version 2 2024-06-18, 23:04Version 2 2024-06-18, 23:04
Version 1 2020-09-18, 13:31Version 1 2020-09-18, 13:31
journal contribution
posted on 2024-06-18, 23:04 authored by GR Bell, NS Kaijaks, RJ Dixon, CF McConvilleAtomic hydrogen cleaning of polar III-V semiconductor surfaces
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Journal
Surface ScienceVolume
401Pagination
125-137ISSN
0039-6028Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
2Publisher
ELSEVIER SCIENCE BVUsage metrics
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Keywords
Science & TechnologyPhysical SciencesChemistry, PhysicalPhysics, Condensed MatterChemistryPhysicsAuger electron spectroscopyelectron energy loss spectroscopyelectron-solid interactionsetchinghydrogengallium antimonideindium antimonideindium arsenidelow energy electron diffractionplasmonssurface chemical reactionENERGY-LOSS SPECTROSCOPYMOLECULAR-BEAM EPITAXYN-TYPE INAS(001)PLASMON EXCITATIONSGROWN GAAS(100)GAASDESORPTIONINSB(001)OXIDESINP
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