Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

Zavabeti, A; Aukarasereenont, P; Tuohey, H; Syed, N; Jannat, A; Elbourne, A; Messalea, KA; Zhang, BY; Murdoch, BJ; Partridge, JG; Wurdack, M; Creedon, DL; van Embden, J; Kalantar-Zadeh, K; Russo, SP; McConville, CF; Daeneke, T

Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

journal contribution

posted on 2024-06-05, 06:50 authored by A Zavabeti, P Aukarasereenont, H Tuohey, N Syed, A Jannat, A Elbourne, KA Messalea, BY Zhang, BJ Murdoch, JG Partridge, M Wurdack, DL Creedon, J van Embden, K Kalantar-Zadeh, SP Russo, CF McConville, T Daeneke

Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

History

Journal

Nature Electronics

Volume

4

Pagination

447-

Publisher DOI

https://doi.org/10.1038/s41928-021-00606-9

Open access

Yes

Link to full text

https://www.nature.com/articles/s41928-021-00606-9.pdf

eISSN

2520-1131

Language

en

Publication classification

CN.1 Other journal article

Issue

6

Publisher

Springer Science and Business Media LLC

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Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

History

Journal

Volume

Pagination

Publisher DOI

Open access

Link to full text

eISSN

Language

Publication classification

Issue

Publisher

Usage metrics

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Keywords

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