Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

Zavabeti, A; Aukarasereenont, P; Tuohey, H; Syed, N; Jannat, A; Elbourne, A; Messalea, KA; Zhang, BY; Murdoch, BJ; Partridge, JG; Wurdack, M; Creedon, DL; van Embden, J; Kalantar-Zadeh, K; Russo, SP; McConville, CF; Daeneke, T

Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

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posted on 2024-06-05, 06:50 authored by A Zavabeti, P Aukarasereenont, H Tuohey, N Syed, A Jannat, A Elbourne, KA Messalea, BY Zhang, BJ Murdoch, JG Partridge, M Wurdack, DL Creedon, J van Embden, K Kalantar-Zadeh, SP Russo, CF McConville, T Daeneke

Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

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Nature Electronics

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Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2 (Nature Electronics, (2021), 4, 4, (277-283), 10.1038/s41928-021-00561-5)

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