Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3
Version 2 2024-06-13, 02:43
Version 1 2020-09-22, 15:26
journal contribution
posted on 2024-06-13, 02:43 authored by PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, GR Bell, V Cimalla, O Ambacher, RG Egdell, F Bechstedt, CF McConvilleBand gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3
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Physical Review B - Condensed Matter and Materials PhysicsVolume
79Article number
ARTN 205211Publisher DOI
ISSN
1098-0121eISSN
1550-235XLanguage
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
20Publisher
AMER PHYSICAL SOCUsage metrics
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Science & TechnologyTechnologyPhysical SciencesMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterMaterials SciencePhysicsdensity functional theoryelectronic density of statesenergy gapindium compoundssurface statesvalence bandsX-ray photoelectron spectraTEMPERATURE DEPENDENCEOPTICAL-PROPERTIESINVERSION-LAYERSINDIUM OXIDESTATESSEMICONDUCTORSTRANSPARENTPARAMETERSDENSITIESFILMS
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