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Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3
journal contribution
posted on 2009-05-01, 00:00 authored by P D C King, T D Veal, F Fuchs, C Y Wang, D J Payne, A Bourlange, H Zhang, G R Bell, V Cimalla, O Ambacher, R G Egdell, F Bechstedt, Chris McConvilleChris McConvilleBand gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2 O3
History
Journal
Physical Review B - Condensed Matter and Materials PhysicsVolume
79Issue
20Article number
ARTN 205211Publisher
AMER PHYSICAL SOCPublisher DOI
ISSN
1098-0121eISSN
1550-235XLanguage
EnglishPublication classification
C1 Refereed article in a scholarly journalUsage metrics
Categories
No categories selectedKeywords
Science & TechnologyTechnologyPhysical SciencesMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterMaterials SciencePhysicsdensity functional theoryelectronic density of statesenergy gapindium compoundssurface statesvalence bandsX-ray photoelectron spectraTEMPERATURE DEPENDENCEOPTICAL-PROPERTIESINVERSION-LAYERSINDIUM OXIDESTATESSEMICONDUCTORSTRANSPARENTPARAMETERSDENSITIESFILMSTEMPERATURE-DEPENDENCEOXIDELAYERS