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Baseband impedance and linearization of FET circuits

journal contribution
posted on 2003-12-01, 00:00 authored by James Brinkhoff, A E Parker, M Leung
Baseband impedance has been identified as having a positive or negative effect on the intermodulation distortion of microwave circuits. The effect can be assessed or utilized with the aid of previously proposed figures-of-merit. Under certain situations, intermodulation cancellation can be achieved simply by adding resistance to the bias network. The impact of baseband impedance on the performance of derivative superposition amplifiers is analyzed. A bias region was studied that exhibits a good second- and third- order intermodulation null with minimal intermodulation dependence on baseband impedance. This allows the effective use of the derivative superposition technique in baseband amplifiers, as well as giving wide-band linearization performance in RF amplifiers.

History

Journal

IEEE transactions on microwave theory and techniques

Volume

51

Issue

12

Pagination

2523 - 2530

Publisher

IEEE

Location

Piscataway, N.J.

ISSN

0018-9480

eISSN

1557-9670

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

2003, IEEE