Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit
Version 2 2024-06-05, 07:53Version 2 2024-06-05, 07:53
Version 1 2020-06-12, 14:14Version 1 2020-06-12, 14:14
journal contribution
posted on 2011-10-01, 00:00 authored by S M Mousavi, M T Ahmadi, H Sadeghi, Azadeh Nilghaz, A Amin, Z Johari, R IsmailBilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates. Copyright © 2011 American Scientific Publishers.
History
Journal
Journal of Computational and Theoretical NanoscienceVolume
8Issue
10Pagination
2029 - 2032Publisher
American Scientific PublishersLocation
Stevenson Ranch, Calif.Publisher DOI
ISSN
1546-1955Language
engPublication classification
C1.1 Refereed article in a scholarly journalUsage metrics
Keywords
Science & TechnologyPhysical SciencesTechnologyChemistry, MultidisciplinaryNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysicsBilayer Graphene Nanoribbon (BGN)Fermi EnergyDegenerate Carrier StatisticNon Degenerate Carrier StatisticFIELDMechanical Engineering
Licence
Exports
RefWorksRefWorks
BibTeXBibTeX
Ref. managerRef. manager
EndnoteEndnote
DataCiteDataCite
NLMNLM
DCDC