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Bilayer graphene nanoribbon carrier statistic in degenerate and non degenerate limit

Version 2 2024-06-05, 07:53
Version 1 2020-06-12, 14:14
journal contribution
posted on 2011-10-01, 00:00 authored by S M Mousavi, M T Ahmadi, H Sadeghi, Azadeh Nilghaz, A Amin, Z Johari, R Ismail
Bilayer Graphene Nanoribbon (BGN) Carrier statistic in the non-degenerate and the degenerate limit is presented. Two dimensional BGN through AB configuration with width less than De-Broglie wave length can be understood as a one dimensional (1D) device. Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. Since a BGN field effect transistor (BGNFET) can be shaped by using graphene bilayers with an external controllable voltage which is perpendicular to the layers in gates. Copyright © 2011 American Scientific Publishers.

History

Journal

Journal of Computational and Theoretical Nanoscience

Volume

8

Issue

10

Pagination

2029 - 2032

Publisher

American Scientific Publishers

Location

Stevenson Ranch, Calif.

ISSN

1546-1955

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal