Bilayer graphene nanoribbon mobility model in ballistic transport limit
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journal contribution
posted on 2022-12-01, 02:52 authored by S Mahdi Mousavi, M T Ahmadi, H Sadeghi, Azadeh Nilghaz, M J Kiani, R IsmailBilayer graphene nanoribbon (BGN) with tunable band gap which can be controlled by an external electric field is focused in our study. AB-stacked system with a stable structure is considered in a FET channel. Based on the assumed structure carrier density effect on charge mobility has been reported at different temperatures. Carrier mobility model is explained based on quantum confinement effect which indicates that carriers behave like traveling wave only in channel direction. Their behavior in other two directions can be approximated by standing wave as well. We prove that carrier mobility in BGNs is a function of temperature and carrier density which illustrate good agreement with experimental data. Copyright © 2013 American Scientific Publishers All rights reserved.
History
Journal
Journal of Computational and Theoretical NanoscienceVolume
10Pagination
1262 - 1265Publisher DOI
ISSN
1546-1955eISSN
1546-1963Publication classification
C1.1 Refereed article in a scholarly journalUsage metrics
Keywords
Science & TechnologyPhysical SciencesTechnologyChemistry, MultidisciplinaryNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysicsBilayer Graphene Nanoribbon (BGN) ModelingCarrier MobilityBGN Ballistic TransportBGN Field Effect TransistorGATEGAPMechanical Engineering
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