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Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer

journal contribution
posted on 2018-06-01, 00:00 authored by Hussain Mohammed Dipu Kabir, Z Ahmed, R Kariyadan, L Zhang, M Chan
Circular organic thin film transistor (OTFT) structures are proposed to reduce the impact of variable grain alignment on the drive current of the polycrystalline organic thin film transistor (OTFT). As the circular structure is planar symmetric, the orientation of the grain cannot affect the drive current of the circular OTFT. Thus, circular electrodes expected to provide a lower variation. Top-gate, bottom-contact circular and conventional OTFTs with drop-casted polycrystalline 6,13-Bis(triisopropyl-silylethynyl) (TIPS)-Pentacene organic semiconducting layer (OSC) are fabricated to verify the theoretical variation reduction. The relative standard deviation (RSD), defined as the ratio of standard deviation and the average of drive current is used as the degree of variations in different structures. According to our fabrication result, circular transistors have a significantly lower variation (20% RSD), compared to the variation of conventional OTFTs (61% RSD).

History

Journal

Solid state electronics

Volume

144

Pagination

49 - 53

Publisher

Elsevier

Location

Amsterdam, The Netherlands

ISSN

0038-1101

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Copyright notice

2018, Elsevier Ltd